Negative photoconductivity in high electron mobility transistors

descriptionPublicationkeyboard_double_arrow_right Article 28 Dec 1987 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 51, pages 2,233-2,235 (issn: 0003-6951, eissn: 1077-3118,

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Authors: C. S. Chang; H. R. Fetterman; D. Ni; E. Sovero; B. Mathur; W. J. Ho;

doi: 10.1063/1.98950

Negative photoconductivity in high electron mobility transistors

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Abstract

High electron mobility transistors are sensitive to light since illumination ionizes deep donor centers and increases the drain current. In this letter the first observation of negative photoconductivity, i.e., drain current decreasing with light, will be reported. The current-voltage characteristics were enhanced by shining white light onto the devices showing negative photoconductivity.

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