Long wavelength GaSb photoconductive detectors grown on Si substrates

B. F. Levine; R. J. Malik; C. G. Bethea; J. Walker

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Applied Physics Letters

Article . 1986 . Peer-reviewed

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https://dx.doi.org/10.1063/1.9...

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Long wavelength GaSb photoconductive detectors grown on Si substrates

descriptionPublicationkeyboard_double_arrow_right Article 21 Apr 1986 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 48, pages 1,083-1,084 (issn: 0003-6951, eissn: 1077-3118,

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Authors: B. F. Levine; R. J. Malik; C. G. Bethea; J. Walker;

doi: 10.1063/1.96604

Long wavelength GaSb photoconductive detectors grown on Si substrates

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Abstract

We report the first long wavelength photoconductive detectors fabricated from GaSb epitaxially grown on Si substrates. Responsivities of 0.18 A/W are obtained at a wavelength of 1.5 μm.

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