Liquid phase epitaxially efficient visible emission from highly doped liquid phase epitaxially grown InP

Frank Z. Hawrylo

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Applied Physics Letters

Article . 1980 . Peer-reviewed

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https://dx.doi.org/10.1063/1.9...

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Liquid phase epitaxially efficient visible emission from highly doped liquid phase epitaxially grown InP

descriptionPublicationkeyboard_double_arrow_right Article 01 Dec 1980 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 37, pages 1,038-1,039 (issn: 0003-6951, eissn: 1077-3118,

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Authors: Frank Z. Hawrylo;

doi: 10.1063/1.91748

Liquid phase epitaxially efficient visible emission from highly doped liquid phase epitaxially grown InP

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Abstract

Intense visible photoluminescence emission has been observed in liquid phase epitaxially grown InP layers which were heavily doped with group-VI (S, Se, Te) elements. Up to 3% Se and over 1020 cm−3 n-type carrier concentrations have been measured in such layers which exhibit InP crystal structures and lattice parameter.

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