Hydrogen passivation of point defects in silicon

descriptionPublicationkeyboard_double_arrow_right Article 15 Apr 1980 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 36, pages 670-671 (issn: 0003-6951, eissn: 1077-3118,

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Authors: J. L. Benton; C. J. Doherty; S. D. Ferris; D. L. Flamm; L. C. Kimerling; H. J. Leamy;

doi: 10.1063/1.91619

Hydrogen passivation of point defects in silicon

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Abstract

Laser melting of crystalline silicon introduces electrically active defects which are observed by capacitance transient spectroscopy. The electrical activity of these point defects is neutralized by reaction with atomic hydrogen at 200 °C.

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