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Advanced germanium layer transfer for ultra thin body on insulator structure

descriptionPublicationkeyboard_double_arrow_right Article 26 Dec 2016 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 109 (issn: 0003-6951, eissn: 1077-3118, Copyright policy )
Authors: Tatsuro Maeda; Wen-Hsin Chang; Toshifumi Irisawa; Hiroyuki Ishii; Hiroyuki Hattori; Vladimir Poborchii; Yuuichi Kurashima; +2 Authors

doi: 10.1063/1.4973405

Advanced germanium layer transfer for ultra thin body on insulator structure

Abstract

We present the HEtero-Layer Lift-Off (HELLO) technique to obtain ultra thin body (UTB) Ge on insulator (GeOI) substrates. The transferred ultra thin Ge layers are characterized by the Raman spectroscopy measurements down to the thickness of ∼1 nm, observing a strong Raman intensity enhancement for high quality GeOI structure in ultra thin regime due to quantum size effect. This advanced Ge layer transfer technique enabled us to demonstrate UTB-GeOI nMOSFETs with the body thickness of only 4 nm.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
21
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