Band offset in (Ga, In)As/Ga(As, Sb) heterostructures

descriptionPublicationkeyboard_double_arrow_right Article , Preprint , Other literature type 28 Nov 2016Embargo end date: 01 Jan 2016 English Publisher:AIP PublishingJournal:Journal of Applied Physics, volume 120 (issn: 0021-8979, eissn: 1089-7550,

Copyright policy )Funded by:DFG | Functionalization of semi..., DFG | unidentified

Authors: S. Gies; M. J. Weseloh; C. Fuchs; W. Stolz; J. Hader; J. V. Moloney; S. W. Koch; +1 Authors

doi: 10.1063/1.4968541 , 10.48550/arxiv.1610.03699

arXiv: 1610.03699

Band offset in (Ga, In)As/Ga(As, Sb) heterostructures

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Abstract

A series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k⋅p method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga, In)As and Ga(As, Sb) quantum wells.

Related Organizations

University of Arizona
United States
Philipps-University of Marburg
Germany

Keywords

Condensed Matter - Mesoscale and Nanoscale Physics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences

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