
doi: 10.1063/1.363360
Optical and electrical properties of SiGe strain-adjusted superlattices have been studied. Diode structures were processed into waveguide geometries to investigate the role of optical confinement and the lowering of cubic symmetry with regards to the polarization properties of interband absorption and emission. The polarization anisotropy of the absorption coefficient suggests that the heavy-hole band of strain-adjusted Si6Ge4 superlattices is the top valence band.
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