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Positron beam defect profiling of silicon epitaxial layers

descriptionPublicationkeyboard_double_arrow_right Article 15 Sep 1991 English Publisher:AIP PublishingJournal:Journal of Applied Physics, volume 70, pages 3,003-3,006 (issn: 0021-8979, eissn: 1089-7550, Copyright policy )
Authors: H. Schut; A. van Veen; G. F. A. van de Walle; A. A. van Gorkum;

doi: 10.1063/1.349329

Positron beam defect profiling of silicon epitaxial layers

Abstract

Epitaxial layers of silicon grown on a Si(100) substrate by molecular-beam epitaxy (MBE) and solid-phase epitaxy (SPE) have been investigated by slow positron beam analysis methods. Results of Doppler broadening measurements revealed that the S parameter of the SPE material is considerably higher than the value measured for the MBE layer, indicative of a higher concentration of open-volume defects in the former material. This was confirmed by measurements of the positronium fraction at elevated temperatures.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
29
Average
Top 10%
Top 10%
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