NiFe inserted layer with different thicknesses on the dielectric properties of multiferroic AlN∕NiFe∕AlN multilayer films fabricated on the B270 glass substrates by the reactive sputtering technique was studied. The variation of dielectric constant for multilayer films is dependent on the thickness of the NiFe inserted layer observed from 40Hzto30MHz. In this work, single AlN layer exhibits dielectric constant value of around 6.5. However, we find that the dielectric constant of the AlN∕NiFe∕AlN multilayer films is raised up to 60 for even with a 1nm thick NiFe inserted layer. Additionally, this work also indicates that the dielectric tunability of AlN∕NiFe∕AlN films is dependent on the external magnetic field. These results conclude some magnetoelectric properties of AlN films those in relation to the NiFe ferromagnetic inserted layer. Possible mechanisms for the enhanced dielectric constant in the AlN∕NiFe∕AlN films have been discussed in the paper.