The authors have developed a fast, yet highly reproducible method to fabricate metallic electrodes with nanometer separation using electromigration (EM). They employ four terminal instead of two-terminal devices in combination with an analog feedback to maintain the voltage U over the junction constant. After the initialization phase (U≲0.2V), during which the temperature T increases by 80–150°C, EM sets in shrinking the wire locally. This quickly leads to a transition from the diffusive to a quasiballistic regime (0.2V≲U≲0.6V). At the end of this second regime, a gap forms (U≳0.6V). Remarkably, controlled electromigration is still possible in the quasiballistic regime.