Deep levels in GaP

Yasuo Okuno; Ken Suto; Jun-ichi Nishizawa

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Journal of Applied Physics

Article . 1973 . Peer-reviewed

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https://dx.doi.org/10.1063/1.1...

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Deep levels in GaP

descriptionPublicationkeyboard_double_arrow_right Article 01 Feb 1973 English Publisher:AIP PublishingJournal:Journal of Applied Physics, volume 44, pages 832-836 (issn: 0021-8979, eissn: 1089-7550,

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Authors: Yasuo Okuno; Ken Suto; Jun-ichi Nishizawa;

doi: 10.1063/1.1662267

Deep levels in GaP

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Abstract

Change of the junction capacitance under the illumination of monochromatic radiation has been observed in GaP n+p junctions. The peaks were observed at 1.8 and 2.4 eV at 77°K. The 1.8 eV peak was attributed to the hole activation from Fe3+ to the valence band. The photoconductivity spectrum and the transient phenomenon of the photoconductivity in p+n junctions and in high-resistivity n-type bulk crystals also showed the presence of the 1.8 eV level due to Fe.

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Tohoku University
Japan

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