Si-GaAs(001) superlattices

descriptionPublicationkeyboard_double_arrow_right Article 28 Sep 1992 Italy English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 61, pages 1,570-1,572 (issn: 0003-6951, eissn: 1077-3118,

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Authors: Sorba, L.; Bratina, G.; Franciosi, A.; Tapfer, L.; Scamarcio, G.; Spagnolo, V.; Molinari, E.;

doi: 10.1063/1.107499

handle: 11380/745414 , 11589/2626 , 11586/26947

Si-GaAs(001) superlattices

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Abstract

Si-GaAs(001) superlattices have been grown by molecular beam epitaxy. X-ray interference measurements and Raman spectroscopy studies in the acoustic range for (Si)2(GaAs)28 and (Si)3(GaAs)50 superlattice structures demonstrate that pseudomorphic growth conditions were achieved. Raman data in the optical range show large (∼50–70 cm−1) confinement- and strain-induced shifts of the Si-like optical modes.

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Italy

Related Organizations

Max Planck Society
Germany
University of Bari Aldo Moro
Italy
Polytechnic University of Bari
Italy
Max Planck Institute for Solid State Research
Germany
University of Modena and Reggio Emilia
Italy

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Keywords

MOLECULAR-BEAM EPITAXY, BAND OFFSETS, SI/GE SUPERLATTICES, RAMAN-SCATTERING, SI, INTERFACE, GAAS, STABILITY, LAYERS, HETEROSTRUCTURES

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