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eScholarship - University of California
Article . 1988
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Applied Physics Letters
Article . 1989 . Peer-reviewed
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https://dx.doi.org/10.1063/1.1...
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Band offsets for pseudomorphic InP/GaAs

descriptionPublicationkeyboard_double_arrow_right Article 16 Jan 1989 United States English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 54, pages 259-261 (issn: 0003-6951, eissn: 1077-3118, Copyright policy )
Authors: Nolle, D.D.;

doi: 10.1063/1.100983

Band offsets for pseudomorphic InP/GaAs

Abstract

Recently determined band-edge hydrostatic deformation potentials are used to predict heterojunction band offsets for the pseudomorphic GaAs-InP system. The calculations include GaAs/InP, InP/GaAs, and strained-layer GaAs-InP superlattices for both [100] and [111] oriented epitaxial growth. The offsets are type II for the unstrained case. The large hydrostatic contributions to the stress-induced band offsets can convert the offsets to type I. This conversion is especially apparent for growth in the [111] direction because of the small Poisson ratio for biaxial stress in the (111) plane.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
17
Average
Top 10%
Top 10%
Green