We have deposited polycrystalline cobalt silicide films by chemical vapor deposition using Co2(CO)8 or HCo(CO)4 as the Co source and SiH4 or Si2H6 as the Si source. The Co:Si ratio of the films is controlled by changing the deposition temperature, and CoSi2 stoichiometry is obtained at 300 °C using SiH4 or at 225 °C when Si2H6 is the Si precursor. Carbon or oxygen contamination of the films is <0.5 at. % at deposition temperatures above 200 °C. Resistivities of films deposited near CoSi2 stoichiometry are typically 200 μΩ cm and drop to 40 μΩ cm upon annealing at 900 °C.