
Together with 1,3 - 1,5 µm optoelectronics, a microelectronic technology is presently developing on InP-based materials, owing to their remarkable transport properties. After general considerations on InP and GaInAs properties, various transistor structures are presented and their comparative merits discussed. This is followed by an analysis of current trends in technology and fields of applications.
[PHYS.HIST] Physics [physics]/Physics archives
[PHYS.HIST] Physics [physics]/Physics archives
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