ELECTROMIGRATION IN d.c. ELECTROLUMINESCENT THIN FILMS OF ZnS

descriptionPublicationkeyboard_double_arrow_right Article 01 Dec 1983Publisher:EDP SciencesJournal:Le Journal de Physique Colloques, volume 44, pages C10-277 (issn: 0449-1947,

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Authors: Jakubowska, G.;

doi: 10.1051/jphyscol:19831058

ELECTROMIGRATION IN d.c. ELECTROLUMINESCENT THIN FILMS OF ZnS

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Abstract

The degradation of the light emission from electroluminescent /EL/ ZnS structures is tentatively explained in terms of copper ion migration. The migration of copper ions affects the properties of the layer close to the positive electrode which appears bright. Some changes in the electrode surface and the precipitation of substantial amounts of copper were observed by means of the optical and electron microscopes.

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