FET Small Signal Modeling and Parameter
FET Small Signal Modeling and Parameter
In this chapter, we introduce small-signal modeling and parameter extraction technique for FETs, an III-V compound semiconductor device pseudomorphic high electron-mobility transistor (PHEMT) is used as an example. The parameter extraction includes pad capacitances, extrinsic inductances, extrinsic resistances, and intrinsic elements extractions.
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These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
Citations provided by BIP!popularityPopularity provided by BIP!
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
Popularity provided by BIP! 2
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