In this chapter we will discuss wet and dry patterning techniques for SiC and the relative merits of these methods. We describe the basic principles involved in etching SiC and problems that can arise because of the binary nature of the lattice and its relatively high bond strength. Recent developments in the use of high-density plasma sources to achieve fast etching rates (in some cases over 1 μm min-1 for bulk 4H-SiC) are discussed: these sources are likely to play a dominant role for processing of SiC devices since they are capable of producing etch depths from 0.1 to 100 μm with minimal disruption of the SiC surface. These processes are also applicable to microelectromechanical systems engineering based on SiC substrates.