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Growth and microstructure of heterogeneous crystal GaSe:InS

Authors: Victor V. Atuchin; Nina F. Beisel; Konstantin A. Kokh; Vladimir N. Kruchinin; Ilya V. Korolkov; Lev D. Pokrovsky; Alphiya R. Tsygankova; +1 Authors

Growth and microstructure of heterogeneous crystal GaSe:InS

Abstract

An optical quality GaSe:InS single crystal has been grown by modified Bridgman technique using nonstationary temperature distribution for effective melt mixing. The phase composition of the crystal has been verified with XRD and TEM. The chemical composition variation along the crystal has been evaluated with electron probe microanalysis (EPMA), atomic-emission spectrometry with inductively-coupled plasma (ICP-AES) and atomic-absorption spectrometry (AAS). The joint solubility limits in the GaSe:InS system are measured as yIn = 0.28 at% and yS = 7 at%. The optical properties of GaSe:InS crystal have been obtained with spectroscopic ellipsometry (SE).

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
17
Average
Top 10%
Top 10%
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