Nitrogen ion implantation in single wall carbon nanotubes

descriptionPublicationkeyboard_double_arrow_right Article 01 Jul 2007 Italy English Publisher:Elsevier BVJournal:Surface Science, volume 601, pages 2,819-2,822 (issn: 0039-6028,

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Authors: XU, Fang; M. MINNITI; C. GIALLOMBARDO; CUPOLILLO, Anna; P. BARONE; A. OLIVA; L. PAPAGNO;

doi: 10.1016/j.susc.2006.12.049

handle: 20.500.11770/130978

Nitrogen ion implantation in single wall carbon nanotubes

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Abstract

Abstract We report an X-ray photoemission and electron energy loss study on 3 keV N 2 + ion implantation in single wall carbon nanotubes. Our results show that nitrogen atoms can bind to carbon in tetrahedral sp3, defects related pyridine-like, and triangular sp2 configurations and such bondings are stable for annealing up to 650 K. Heating at higher temperatures results in preferential substitutional nitrogen doping. This technique opens a new channel for controlled doping in carbon nanotubes for device applications.

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Italy

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Keywords

Ion bombardment; Ion implantation; Carbon nanotubes

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