Abstract Capacitance–voltage measurements are performed on sub-100 nm high-k/metal gate p-MOSFETs to extract the intrinsic capacitance per gate length. This is then repeated on simulated devices using finite element modeling to compare to the experimental results. The intrinsic channel capacitance for the simulated devices is isolated from the parasitic capacitance, allowing for the comparison of analytic models of parasitic capacitances to the simulation.