A new Schottky diode, Al/p-GaSe, was presented in this study. It shows an effective barrier height of 0.96 eV with an ideality factor of 1.24 over five decades and a reverse leakage current density of 4.12◊10 7 A/cm 2 at 2 V after rapid thermal annealing at 400 C for 30 s. The generation‐recombination effect of the Schottky diode was decreased as the annealing temperature was increased. The formation of Al1.33Se2 was observed by X-ray diffraction analysis after the diode was annealed at 400 C for 30 s. Owing to the grains’ growth, the surface morphology of the 400 C-annealed diode was rougher than that of the unannealed diode, which was observed both by the AFM and the SEM analysis. c 2006 Elsevier Ltd. All rights reserved.