Abstract We have proposed a self-epitaxy process for CeO 2 cap buffer layer deposition by using PLD in order to improve the deposition rate in the IBAD process. The process is combined with a thin IBAD buffer layer by a short time deposition and a self-epitaxy PLD cap layer by high rate deposition. The materials for both IBAD buffer layer and PLD cap layer were studied in terms of the grain alignment. Gd 2 Zr 2 O 7 (GZO) for the IBAD buffer layer and CeO 2 for the PLD cap layer are the best combination. It was estimated that a deposition time of the combination process could be about one-third of the conventional IBAD process. A 55 m long PLD-CeO 2 cap layer was fabricated at the tape transfer speed of 5 m/h on an IBAD-GZO tape by a reel to reel process. A PLD-CeO 2 cap layer improved the Δ φ value of the buffer layer and also the uniformity of the Δ φ values throughout the whole length. While the Δ φ values of IBAD-GZO were in the range of 13.9° and 18.8°, those of PLD-CeO 2 cap layer were improved to be in the range of 5.7° and 8.7°.