AbstractIn this paper, a CMOS fabrication technology-based humidity sensor has been designed, manufactured and tested. The sensor using parallel plate capacitor structure, the dielectric materials absorb or desorb water molecules made changes to dielectric constant, lead to the parallel plate capacitor values changes to characterize ambient humidity. We have established physical model of the device, respectively, simulated the process of rising and lowering humidity in steady and dynamic state; the primarily parameters sensor response time have been an in-depth study. Have analyzed the relations between the response time and the structures of the device; Proposed concept of “dead-response zone”.