Intrinsic light yield and light loss coefficient of Bi4Ge3O12 single crystals

descriptionPublicationkeyboard_double_arrow_right Article 01 Oct 2014 English Publisher:Elsevier BVJournal:Optical Materials, volume 36, pages 2,030-2,033 (issn: 0925-3467,

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Authors: Nattasuda Yawai; Weerapong Chewpraditkul; Chalerm Wanarak; Martin Nikl; Wichian Ratanatongchai;

doi: 10.1016/j.optmat.2013.12.034

Intrinsic light yield and light loss coefficient of Bi4Ge3O12 single crystals

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Abstract

Abstract In this paper we present the scintillation properties of polished Bi4Ge3O12 (BGO) crystals grown by the Bridgman method. The light yield (LY) and energy resolution were measured using XP5200B photomultiplier. At 662 keV γ-rays, high LY of 9680 photons/MeV and good energy resolution of 8.6% were obtained for a 5 × 5 × 1 mm3 BGO sample. The intrinsic LY and light loss coefficient were evaluated. The photofraction in pulse height spectrum of 662 keV γ-rays and the mass attenuation coefficient at 59.5 and 662 keV γ-rays were also determined and compared with the theoretical ones calculated using the WinXCom program.

Related Organizations

King Mongkut's University of Technology Thonburi
Thailand
Thailand Institute of Nuclear Technology
Thailand

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