Controversial issues in negative bias temperature instability

descriptionPublicationkeyboard_double_arrow_right Article 01 Feb 2018 English Publisher:Elsevier BVJournal:Microelectronics Reliability, volume 81, pages 244-251 (issn: 0026-2714,

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Authors: James H. Stathis; Souvik Mahapatra; Tibor Grasser;

doi: 10.1016/j.microrel.2017.12.035

Controversial issues in negative bias temperature instability

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Abstract

Abstract In spite of 50 years of history, there is still no consensus on the basic physics of Negative Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric, currently vie for dominance. The differences appear fundamental: one model holds that NBTI is a diffusion-limited process and the other holds that it is reaction-limited. Basic issues of disagreement are summarized and the main controversial aspects of each model are reviewed and contrasted.

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