Recovery and universality in NBTI

descriptionPublicationkeyboard_double_arrow_right Article 01 May 2014 English Publisher:Elsevier BVJournal:Microelectronics Reliability, volume 54, pages 889-892 (issn: 0026-2714,

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Authors: Yoshiki Yonamoto;

doi: 10.1016/j.microrel.2014.01.019

Recovery and universality in NBTI

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Abstract

Abstract The fast recovery behavior in negative bias temperature instability (NBTI) in SiON gate p-type metal–oxide–silicon field effect transistors was investigated. The fast recovery is due to the hole detrapping from the K-center ( N 3 Si , where denotes a dangling bond). The Gaussian function-like hole trap energy level distribution explains the universality in the fast recovery. The results shed light on the NBTI mechanism.

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Hitachi (Japan)
Japan

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