A novel gate-suppression technique for ESD protection

descriptionPublicationkeyboard_double_arrow_right Article 01 Aug 2012 English Publisher:Elsevier BVJournal:Microelectronics Reliability, volume 52, pages 1,598-1,601 (issn: 0026-2714,

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Authors: Meng Miao; Shurong Dong; Mingliang Li; Jian Wu 0004; Fei Ma; Jianfeng Zheng; Yan Han 0005;

doi: 10.1016/j.microrel.2011.09.025

A novel gate-suppression technique for ESD protection

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Abstract

Abstract A novel gate-suppression technique derived from source-pumping technique is proposed for Electrostatic Discharge (ESD) protection application. By employing the complementary SCR structure, an improved source-pumping and the gate-suppression scheme are able to extend ESD window and endure a high level of ESD impact without additional layout area cost. The fast rise time TLP test revealed the gate-suppression technique provide more effective protection than the source-pumping technique.

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Zhejiang Ocean University
China (People's Republic of)

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