Reliability and ageing tests on power semiconductor devices require estimation of junction temperatures in order to control thermal stresses and monitor failure criteria. For this purpose, thermo-electrical parameters, such as voltage forward drop dependence with temperature are usually carried out in low injection level. Nevertheless, it is still difficult to evaluate the limits of such exploitation. An analytical model has been developed and validated by experimental measurements in order to evaluate self-heating effects and to understand high temperature effects. This model should also allow to highlight the role of some physical parameters in the voltage-temperature dependence and to clarify such thermal calibration.