PMOSFET anti-fuse using GIDL-induced-HEIP mechanism

descriptionPublicationkeyboard_double_arrow_right Article 01 Sep 2010 English Publisher:Elsevier BVJournal:Microelectronics Reliability, volume 50, pages 1,309-1,311 (issn: 0026-2714,

Copyright policy )

Authors: J. Y. Seo; J. E. Seok; W. S. Kim; N. H. Cha; J. S. Kang; B. S. So;

doi: 10.1016/j.microrel.2010.07.053

PMOSFET anti-fuse using GIDL-induced-HEIP mechanism

- Summary
- Metrics

Abstract

Abstract We propose a novel electrical fuse (e-fuse) program procedure using shallow trench isolation (STI) edge trapping mechanism of PMOSFET by applying AC pulses. We obtained flash characteristics using conventional PMOSFET structure, when injected AC pulse on source node under off-state condition (Vg = high, Vd = low). In order to verify programming, double hump characteristics and thermal conduction analysis are introduced.

Related Organizations

Samsung
Korea (Republic of)
Samsung Electronics (South Korea)
Korea (Republic of)

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	5
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Average
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average