Investigation of MOSFET failure in soft-switching conditions

descriptionPublicationkeyboard_double_arrow_right Article 01 Sep 2006 Italy English Publisher:Elsevier BVJournal:Microelectronics Reliability, volume 46, pages 1,790-1,794 (issn: 0026-2714,

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Authors: Francesco Iannuzzo; Giovanni Busatto; Carmine Abbate;

doi: 10.1016/j.microrel.2006.07.061

handle: 11580/13110

Investigation of MOSFET failure in soft-switching conditions

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Abstract

Thanks to an ad-hoc experimental test equipment, the reliability of MOSFET devices in soft-switching operations has been investigated aimed to discovering the role of the freewheeling phase in the device reliability reduction. Extensive tests at several temperatures, on-state currents, reverse current peaks, dc-voltages and gate timings have been done, showing that specific devices for soft-switching are needed to improve the overall converter reliability. Standard commercial MOSFETs are more prone to failures descending from huge power dissipation at the gate turn-off, related to preceding body diode usage.

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Italy

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University of Cassino and Southern Lazio
Italy

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