Long time transients in hafnium oxide

descriptionPublicationkeyboard_double_arrow_right Article , Conference object 01 Sep 2007 Italy English Publisher:Elsevier BVJournal:Microelectronic Engineering, volume 84, pages 2,394-2,397 (issn: 0167-9317,

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Authors: PUZZILLI, Giuseppina; IRRERA, Fernanda;

doi: 10.1016/j.mee.2007.04.064

handle: 11573/76391 , 11573/407939

Long time transients in hafnium oxide

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Abstract

In this work characterization of HfO"2 films in transient regime is presented. Charge trapping and detrapping, and degradation transients were investigated at long times while monitoring gate current or voltage. As for charge trapping, a logarithmic dependence on time was found. The entity of the external perturbation inducing degradation was influenced by the HfO"2thickness. The detrapping rate was systematically studied as a function of pulse features and film thickness, and was found to depend only on the HfO"2 thickness, with a power law behavior as a function of time.

Country

Italy

Related Organizations

Sapienza University of Rome
Italy
Roma Tre University
Italy

Keywords

degradation; hafnium oxide; trapping transient

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