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Current Opinion in Solid State and Materials Science
Article . 2006
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Article . 2006
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Current Opinion in Solid State and Materials Science
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Anisotropy in the wet-etching of semiconductors

descriptionPublicationkeyboard_double_arrow_right Article 01 Feb 2005 Netherlands English Publisher:Elsevier BVJournal:Current Opinion in Solid State and Materials Science, volume 9, pages 84-90 (issn: 1359-0286, Copyright policy )
Authors: Kelly, J.J.; Philipsen, H.G.G.;

doi: 10.1016/j.cossms.2006.04.003

Anisotropy in the wet-etching of semiconductors

Abstract

The surface chemistry and electrochemistry of the anisotropic etching of semiconductors are reviewed. Recent insights into the anisotropic chemical etching of silicon in alkaline solution and of electrochemical etching of anisotropic pores in n-type semiconductors are described. The possible role of galvanic effects in open-circuit etching is emphasized.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
47
Top 10%
Top 10%
Average
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bronze
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