
Abstract BaBi 4 Ti 4− x Zr x O 15 with x = 0.1, 0.2, 0.3 and 0.5, has been synthesized via modified solid state reaction route. X-ray diffraction studies confirmed the formation of single phase Zr 4+ substituted BaBi 4 Ti 4 O 15 up to x = 0.2. ZrO 2 and Bi 2 O 3 based impurity phases were found at x = 0.3 and 0.5 substitutions. However, Rietveld refinement showed the increase in lattice parameters of BaBi 4 Ti 4 O 15 up to x = 0.5 substitutions. A broad dielectric peak associated with frequency dependence dielectric maximum temperature was observed at low substitutions. Relaxor behavior was suppressed at x = 0.5 substitution. A broadening and shifting of permittivity-temperature peak was found for the substitution. The high temperature slopes of dielectric peaks were analyzed by quadratic law for relaxors. The degree of relaxation and phase transformation diffusiveness were investigated at different substitutions.
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