Laser ablation lithography on thermoelectric semiconductor

descriptionPublicationkeyboard_double_arrow_right Article 01 Apr 2006 English Publisher:Elsevier BVJournal:Applied Surface Science, volume 252, pages 4,759-4,762 (issn: 0169-4332,

Copyright policy )

Authors: O.Yu. Semchuk; V.N. Semioshko; L.G. Grechko; M. Willander; M. Karlsteen;

doi: 10.1016/j.apsusc.2005.07.112

Laser ablation lithography on thermoelectric semiconductor

- Summary
- Metrics

Abstract

In this paper, experimental results of the investigation of the periodic structure on thermoelectric semiconductor Cu2Se are presented. Periodic structures were formed on surfaces of semiconductors due to multi-beam interaction of Q-switched Nd:YAG laser, which was operated in the lowest order of Gaussian mode and pulse duration 7 ns. Surface temperature evolution and transient reflectivity are studied during laser treatment. Creation of Cu islands in the maximal intensity of interference pattern was found.

Related Organizations

University of Gothenburg
Sweden

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	4
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Average
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average