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Dielectric breakdown I: A review of oxide breakdown

descriptionPublicationkeyboard_double_arrow_right Article 01 Oct 1996 Netherlands English Publisher:Elsevier BVJournal:Microelectronics Journal, volume 27, pages 611-622 (issn: 1879-2391,

Authors: J.H. Klootwijk; J.F. Verweij;

doi: 10.1016/0026-2692(95)00104-2

Dielectric breakdown I: A review of oxide breakdown

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Abstract

This paper gives an overview of the dielectric breakdown in thin oxide layers on silicon. First test methods are discussed, followed by their application to the estimation of the oxide lifetime. The main part of the paper is devoted to the physical background of the intrinsic breakdown. Finally, defect-related or extrinsic breakdown is discussed.

Country

Netherlands

Related Organizations

University of Twente
Netherlands

Impact byBIP!

	citations This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	105
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	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Top 1%
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average