Generation and accumulation of point defects in FCC single crystals upon plastic strain

descriptionPublicationkeyboard_double_arrow_right Article 01 Apr 2009 English Publisher:Springer Science and Business Media LLCJournal:Russian Physics Journal, volume 52, pages 398-410 (issn: 1064-8887, eissn: 1573-9228,

Copyright policy )

Authors: V. A. Starenchenko; D. N. Cherepanov; Yu. V. Solov’eva; L. E. Popov;

doi: 10.1007/s11182-009-9237-0

Generation and accumulation of point defects in FCC single crystals upon plastic strain

- Summary
- Metrics

Abstract

A model of point defect generation and accumulation in a FCC crystal upon strain with a constant rate at room temperature is suggested in the present work. The model results are in agreement with the available experimental data. The influence of point defects on the formation of fragmented substructures is analyzed. The model is verified using experimental data on the stress‒strain curve, dislocation density, vacancy concentration, and misorientation angle.

Related Organizations

Tomsk State University of Architecture and Building
Russian Federation

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	16
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Top 10%
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Top 10%
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average