Fabrication of silicon nanowires

descriptionPublicationkeyboard_double_arrow_right Article 01 May 1998Publisher:Springer Science and Business Media LLCJournal:Applied Physics A: Materials Science & Processing, volume 66, pages 539-541 (issn: 0947-8396, eissn: 1432-0630,

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Authors: J.L. Liu; Y. Lu; Y. Shi; S.L. Gu; R.L. Jiang; F. Wang; Y.D. Zheng;

doi: 10.1007/s003390050709

Fabrication of silicon nanowires

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Abstract

at 750 °C and 850 °C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope images. It is found that the oxidized nanowire following oxidation at 750 °C still keeps its pentagon shape even if it has been oxidized for 19 h. However, the oxidized samples at 850 °C become circular in shape. The oxidation-temperature dependence of the sample shapes is discussed. Our results should be useful in generating silicon nanowires coated with SiO2 in microelectronic technology with careful selection of the SiO2 growth temperatures.

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Nanjing University
China (People's Republic of)
Nanjing University
China (People's Republic of)

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