The substructure, phase composition, and orientation of CuInSe2 (CIS) films produced by consecutive deposition from two-component vapors (Cu-Se and then In-Se) were studied by transmission electron microscopy. The films were grown by thermal evaporation from separate elemental sources and by magnetron sputtering of compound targets. The results demonstrate that consecutive deposition on NaCl, fluorphlogopite, and Mo surfaces leads to the growth of Cu2Se films in the first step of the process and CIS films in the second step. The epitaxial CIS films grown on (001) NaCl consist of grains in two orientations, with shear defects present in both types of grains. On (111) NaCl and (001) fluorphlogopite, epitaxial CIS films are obtained, which consist of blocks with identical orientations. It is shown that biaxially textured CIS films can be grown on trioriented Mo layers.