Ultrafast spectroscopy of semiconductors

descriptionPublicationkeyboard_double_arrow_right Part of book or chapter of book , Article 01 May 1992 German Publisher:Springer Berlin HeidelbergJournal:Optics and Photonics News, volume 3, page 33 (issn: 1047-6938, eissn: 1541-3721,

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Authors: ERNST O. GÖBEL;

doi: 10.1007/bfb0108292 , 10.1364/opn.3.5.000033

Ultrafast spectroscopy of semiconductors

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Abstract

Ultrafast laser spectroscopy with time resolution down to 6 femtoseconds has been applied to study optical dephasing, relaxation, and recombination in various semiconductors and semiconductor microstructures. We report some applications of ultrafast laser spectroscopy to bulk and quantum well III–V and II–VI semiconductors in order to illustrate the potential. The characteristics time scales for dephasing, relaxation and recombination are discussed and determined experimentally.

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Philipps-University of Marburg
Germany

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