Metal-semiconductor contacts are drawing increasing attention due to their potential for applications in devices and integrated circuits. Experimentally, lower barrier heights have been reported more often for metallic contacts onp-type semiconductors. Here we report our results regarding barrier height of zinc onp-type germanium. The result is discussed in light of the mechanisms which could reduce the pinning effect in such contacts which are normally thought to be responsible for the observation of low barrier heights onp-type semiconductors.