Gallium antimonide crystals were grown by the vertical Bridgman technique. Effects of ampoule diameter and dopant impurities (Te, P and In) on growth were studied. Crystal stoichiometry and homogeneity were verified with electron-probe microanalysis. Impurity distribution was investigated by secondary ion mass spectrometry (SIMS) and electron probe micro analysis. Variations of etch pit density (EPD) along the length and the diameter were studied by image analysis method. Resistivity, mobility and carrier concentrations were measured along the length of the crystal.