In-situ spectroscopic ellipsometry of HgCdTe

descriptionPublicationkeyboard_double_arrow_right Article 01 Aug 1996 English Publisher:Springer Science and Business Media LLCJournal:Journal of Electronic Materials, volume 25, pages 1,406-1,410 (issn: 0361-5235, eissn: 1543-186X,

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Authors: J. D. Benson; A. B. Cornfeld; M. Martinka; K. M. Singley; Z. Derzko; P. J. Shorten; J. H. Dinan; +5 Authors

doi: 10.1007/bf02655042

In-situ spectroscopic ellipsometry of HgCdTe

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Abstract

An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process.

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United States Army Research Laboratory
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