Tellurium films of different thickness are cathodically deposited on copper substrate using sodium tellurite solutions ofpOH 3.95. The kinetics of the primary processes and modes of conduction occurring at the Cu/Te layer/electrolyte interfaces are studied using rapid galvanostatic rectangular pulses. Approximate values for the specific conductance of the surface layer are calculated from the experimental resistance overpotential. Activation over-potentials are explained in view of charge transfer reactions associated with reactions occurring at the electrode/solution interface.