
doi: 10.1007/bf00660582
Photoluminescence spectra are widely used in photoluminescent methods for monitoring the parameters of graded-gap semiconducting structures in order to determine the basic parameters of such structures. The effect of multiple absorption and emission of recombination radiation photons, which deforms the photoluminescence spectra and can lead to appreciable errors in the determination of the transfer and recombination parameters of nonequilibrium charge carriers, are examined.
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