Plasma-assisted etching

descriptionPublicationkeyboard_double_arrow_right Article 01 Mar 1982 English Publisher:Springer Science and Business Media LLCJournal:Plasma Chemistry and Plasma Processing, volume 2, pages 1-41 (issn: 0272-4324, eissn: 1572-8986,

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Authors: J. W. Coburn;

doi: 10.1007/bf00566856

Plasma-assisted etching

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Abstract

The mechanistic and parametric complexity of a plasma etching environment often causes confusion and delays in the development of a suitable plasma etching process. This paper is an attempt to alleviate this problem by discussing some of the important physical and chemical phenomena and, where possible, relating these phenomena to apparatus selection and operation.

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IBM (United States)
United States

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