Spin-transfer torque random access memory (STT-RAM) is one of the most promising substitutes for universal main memory and cache due to its excellent scalability, high density and low leakage power. Nevertheless, the current non-volatile STT-RAM cache architecture also has some drawbacks, such as long write latency and high write energy, which limit the application of STT-RAM in the top level cache design. To solve these problems, we relax the retention time of STT-RAM to explore its different write performance, and propose a novel STT-RAM L1 cache architecture implemented with volatile STT-RAM as well as its related refresh scheme. The performance of proposed design is the same as SRAM L1 cache while its overall power consumption is only 63.8% of the latter one.