The focus of this chapter is to characterize individual materials and the interface of graphene-\(\text {MoS}_2\) heterostructures. Various optical characterization such as Raman spectroscopy, and photoluminescence study etc. are utilized to identify layer numbers, interlayer coupling properties etc. Atomic force microscopy is done to confirm the topography of the material. Electrical characterization is carried out to study interface characteristics of graphene-\(\text {MoS}_2\) structure. Charge transfer and Schottky barrier formation is confirmed from electrostatic response study of these devices. Charge transfer and residual doping phenomena are explained considering the Fermi energy difference between graphene and \(\text {MoS}_2\). A possible band diagram of the graphene-\(\text {MoS}_2\) interface is presented, which considers the presence of an interfacial electric field inside \(\text {MoS}_2\) due to Schottky barrier formation. A correlation between optical and electrical response is established which supports the charge transfer model applicable to graphene-\(\text {MoS}_2\) interface.