Abstract Here in, we report the formation of CdTe quantum dot interconnected solid nanowire network by a bottom up process. The as formed nanostructure, also, named as quantum dot solid structure has exhibited a high magnitude photocurrent value of 0.25 mA, corresponding to the biasing voltage of 1.5 V. The improved photocurrent generation is a consequence of suppressed inter‐dot charge transport resistance upon quantum solid nanowire network formation. This interesting network structure was further decorated with graphene quantum dots by optimizing the growth parameters. The hybrid nanostructure has shown a further enhancement in the photocurrent generation. Formation of such new nanostructures and their interesting photo‐physical properties are discussed in detail.