51‐4: QLED‐on‐Silicon Microdisplays

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 01 Aug 2020 English Publisher:WileyJournal:SID Symposium Digest of Technical Papers, volume 51, pages 758-761 (issn: 0097-966X, eissn: 2168-0159,

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Authors: Sikai Su; Chengling Li; Min Zhang; Shuming Chen; Shengdong Zhang;

doi: 10.1002/sdtp.13979

51‐4: QLED‐on‐Silicon Microdisplays

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Abstract

In this paper, a 0.47 inch active‐matrix microdisplay with top‐emitting monochromatic quantum dot light‐emitting diode (QLED) array on silicon is demonstrated. A titanium nitride (TiN) is employed as the anode and the devices are fabricated by all‐solution process. The driver chip is designed especially for QLED microdisplay. The demonstrated microdisplay exhibits a maximum brightness of 267 cd/m 2 and a gray level of 256.

Related Organizations

Southern University of Science and Technology
China (People's Republic of)
Peking University
China (People's Republic of)
Peking University
China (People's Republic of)

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